| 摘要 |
PURPOSE:To enhance the performance due to increase in a short gate and to simultaneously perform the minimization of a series resistor between a source and a drain by forming a tapered stepwise difference of a semi-insulating layer on a gate electrode region, and forming a lateral growth on the insulating film in a selective epitaxial growth. CONSTITUTION:An insulating film 14 is formed on a semi-insulating layer 13, a window is opened by etching at a drain side of an insulating film, with the insulating film 14 as a mask the layer 13 is etched, and a tapered stepwise difference 15 of the layer 13 is formed at the boundary. After the film 14 is then removed, an insulating film 16 is again formed on the layer 13 and an N type active layer 12, windows are opened by etching for source and drain electrode regions at the insulating film, with the film 16 as a mask the layer 13 of the source side, the layer 12 of the drain side and a semi-insulting GaAs substrate 11 are partly selectively etched, and selectively laminated layer epitaxial growths of N<+> type layers 17, 18 and semi-insulating layers 19, 20 are performed by an MO-CVD method in a dug part. In this selective epitaxial growth, lateral growths 21, 22 are formed on the film 16. |
