| 摘要 |
PURPOSE:To obtain a preferable MIS structure by forming a high resistance semiconductor on a conductive semiconductor by an ion implantation method or the like, and reducing boundary charge density by utilizing the boundary between the conductive semiconductor and the high resistance semiconductor layer. CONSTITUTION:Si ions are selectively implanted on a semiinsulating GaAs substrate 11 to form an n type semiconductor layer 12 to become a channel region, and n<+> type semiconductor layers 13, 14 to respectively become a source and a drain. Then, B ions are implanted from the surface of the layer 12 to become the channel region, and a high resistance semiconductor layer 15 is formed on part of the layer 12. Thereafter, an SiO2 film 16 is accumulated as an insulating film. Then, ohmic electrodes are formed by metal made of Au-Ge as source and drain electrodes 17, 18. A gate electrode 19 made of aluminum is formed. In this manner, an MISFET for controlling the conductivity of the layer 15 through the layer 15 and the film 16 is produced by the voltage applied to the gate electrode 19. |
