发明名称 SEMICONDUCTOR LIGHT EMITTING ELEMENT
摘要 PURPOSE:To obtain a light emitting element which is improved in the heat sink and has excellent characteristics and reliability by composing a metal layer formed on an electrode of the side to be mounted on the heat sink or a package of a metal to become a reaction barrier between a plated layer metal and a mounting solder agent. CONSTITUTION:A gold plating layer 29 is formed on a P type ohmic electrode 26, and a titanium-platinum metal 30 is formed by an electrode beam deposition or sputtering method on the surface of a gold plating layer 29. Eventually, metal 31 is formed on the surface of the platinum layer by a depositing or plating method. When a solder agent 14 of tin formed on the heat sink 13 is fused and an LED of this structure is fusion-bonded to the heat sink 13, a titanium-platinum layer 30 is formed on the surface of the layer 29. Accordingly, the solder agent 14 of tin and a reactive layer 15 of gold are suppressed in the progress by the layer 30, and is not proceeded to the layer 29. As a result, the thermal conductivity of the PHS does not decrease, and the stress is suppressed by the reaction layer.
申请公布号 JPS59165474(A) 申请公布日期 1984.09.18
申请号 JP19830039865 申请日期 1983.03.10
申请人 NIPPON DENKI KK 发明人 UJI TOSHIO
分类号 H01L33/30;H01L33/40;H01L33/62;H01S5/00;H01S5/042 主分类号 H01L33/30
代理机构 代理人
主权项
地址