| 摘要 |
PURPOSE:To enable uniform growth of a thin film of epitaxial layer having a steep density profile in a wide area by controlling the reaction velocity by irradiating the growth surface with ultraviolet rays in the epitaxial growth of a single crystal by the chemical vapor deposition process of an organometallic compd. CONSTITUTION:The temp. of a substrate 1 on a susceptor 2 is held at a high temp. as high as possible within a range causing no growth on the substrate surface by the charge of the raw material gas 7 alone. After the compsn. of the gas becomes stable and sufficiently uniform after the charge of the gas 7, the growth surface of the subsrate 1 is irradiated with ultraviolet rays generated by an ultraviolet ray generator 9 through a reflection mirror 10 and a window 12 of the ultraviolet rays. By this irraidation, decomposition reactions of the organometallic compd. and an organic hydride are prompted, and an epitaxial layer is grown on the substrate 1. To change the compsn. of the epitaxial layer during its growth, the growth is interrupted by stopping the irradiation with ultraiolet rays and the compsn. of the gas to be charged is changed to a new compsn.; and the irradiation of ultraviolet rays is resumed after the compsn. becomes uniform. |
