发明名称 MANUFACTURE OF HIGH PURITY ALPHA MERCURIC IODIDE
摘要 The invention relates to a process for the preparation of high purity alpha mercuric iodide for use as a starting material source for the growth of monocrystals usable for nuclear detection. This process consists of synthesizing alpha mercuric iodide and subjecting the thus obtained alpha mercuric iodide to a purification treatment consisting of at least one vacuum distillation stage at a temperature of at least 255 DEG C. For this distillation stage, use is made of a reactor having three zones kept at different temperatures. The iodide to be purified is introduced into the first zone kept at at least 255 DEG C. The mercuric iodide vapors pass through the second zone kept at a higher temperature before being condensed in the air-cooled third zone.
申请公布号 JPS59164635(A) 申请公布日期 1984.09.17
申请号 JP19840035460 申请日期 1984.02.28
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE 发明人 YAN FUROORAN NIKORO
分类号 C01G13/00;C01G13/04;C30B7/00 主分类号 C01G13/00
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