| 摘要 |
PURPOSE:To facilitate to control concentration of electrons when a III-V group compound semiconductor layer is to be formed by a method wherein the compound of Te and another element is used as the N type impurities of the III-V group compound semiconductor. CONSTITUTION:When a III-V group compound semiconductor is to be manufactured according to liquid phase epitaxial growth, a compositionally uniform compound of Te and another element is used as N type impurities. As the other element, at least one kind of elements to act as N type impurities to exert no adverse effect to the characteristic of the element, or to act as electrically neutral impurities is used. As the element thereof, Al, Ga, In, Si, Sn, Pb, As, Sb, Bi and Se are used. Te is used generally as N type impurities at liquid phase epitaxial growth of the III-V group compound semiconductor, while because the segragation factor of Te is large, the charge quantity thereof becomes extremely small, and precision of weighing is deteriorated. By using the compound of the other impurity and Te, enhancement of weighing precision can be attained. |
