发明名称 PROTECTING CIRCUIT OF TRANSISTOR
摘要 PURPOSE:To protect a transistor TR from its breakdown by connecting the TR in parallel to a large current TR and setting the collector-emitter voltage of the TR at a level lower than the prescribed value. CONSTITUTION:A DC power supply 100 is connected in parallel to a load 104, and a TR101 for large current is connected in series between the supply 100 and the load 104. A diode 102 is connected in parallel to the TR101, and the collector-emitter voltage of the TR101 is set at a level lower than the protectable value. An overcurrent passes not through the TR101 but through the diode 102 when the power supply is started or in an overcurrent mode. Thus the TR101 can be protected from its breakdown.
申请公布号 JPS59163616(A) 申请公布日期 1984.09.14
申请号 JP19830036972 申请日期 1983.03.07
申请人 NIPPON DENKI KK 发明人 KATSURA YOSHIHIKO
分类号 G05F1/56;G05F1/573 主分类号 G05F1/56
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