| 摘要 |
PURPOSE:To reduce the conductor wiring pitch of a semiconductor device by a method wherein a first film is buried by selfalignment in a recess part corresponding to a contact hole part, a second film corresponding to a wiring pattern is formed, and etching is performed. CONSTITUTION:After an n<+> type layer 22 is formed on a p-type Si substrate 21, and the whole surface is covered with an SiO2 film 23, a contact hole 24 is formed. After then, an Al film 25 is formed, a resist film 26 to be used as an etching mask is applied to be formed on the top surface thereof, and etching is performed. The resist film 26 is left by selfalignment in the recess part corresponding to the contact hole 24 part. Then a resist film 27 is applied as a second film, and a pattern is formed. Etching is not proceeded up to the surface of the substrate even when a part of the contact hole 24 part is exposed according to discrepancy of mask positioning of the pattern of the resist film 27. |
