| 摘要 |
PURPOSE:To prevent the copper of leading-out electrode metal foil from melting in solder, and to avoid deterioration of the withstand voltage of a semiconductor device by a method wherein the circumference of the leading-out electrode metal foil is covered with a shielding layer enabled to obstruct passage of copper. CONSTITUTION:The circumference of a leading-out electrode metal foil 18 is covered with a nickel film 24 to act as a shielding layer. The nickel film 24 is provided according to plating. Because the nickel film 24 acts as a barrier to copper even at a high temperature, the copper of the leading-out electrode metal foil 18 is not molten in solder 20 at melting time of solder 20 at the high temperature of the degree of 380 deg.C. Accordingly, reaction between copper and silicon is not generated even when a gap part B exists, and deterioration of the reverse withstand voltage between a gate and a cathode at assembling time can be made to nil. |
