| 摘要 |
PURPOSE:To simplify a manufacturing process, and to increase the degree of integration by doping an impurity from an electrode window on a protective film bored through etching treatment and forming source-drain regions. CONSTITUTION:A protective film 17 is applied and formed on an integrated circuit substrate 11 to which a gate electrode 16 is shaped. Crystallinity is inferior to other sections at a stepped section where the gate electrode 16 and an active region 15 are in contact in the protective film 17. Consequently, an opening section is bored to the protective film on the stepped section 18 through the etching of the whole surface. Accordingly, an impurity is doped from the shaped opening section to form source-drain regions, and an aluminum electrode 19 is evaporated. |
