| 摘要 |
PURPOSE:To prevent a semiconductor device from disconnection of aluminum wirings at the edges of windows by a method wherein a metal film is formed on a semiconductor substrate having the electrode windows, and after the metal film thereof is etched leaving the window parts, the surface is flattened using a polycrystalline silicon film. CONSTITUTION:A conductive metal film 17 of tantalum, etc. is formed to be adhered on a semiconductor substrate 11 formed with a gate electrode, a source and a drain regions, PSG 16, and opened with electrode windows, and etching is performed as to leave the metal film 17 at several 1,000Angstrom thickness at the peripheral parts of the electrode windows. A polycrystalline silicon film 18 is formed to be adhered thereon, and the polycrystalline silicon film 18 and the metal film 17 are etched to be removed according to reactive ion etching. The metal films 17 are buried in the electrode window parts according to etching thereof, the polycrystalline silicon films 18 of a small quantity are left on the top surfaces thereof, and the electrode windows having no level difference can be formed. Aluminum electrodes 19 are evaporated to be formed to complete formation of the electrodes. |
