| 摘要 |
PURPOSE:To form a single-crystal Si thin film with a smooth surface on an insulation film by a method wherein a laser beam or an electron beam is applied to the domain which is made amorphous before application of the laser beam or the electron beam. CONSTITUTION:When a heating source 6 is advanced to the direction 7, polycrystalline cores 10 are produced in front of the source 6. The polycrystalline cores 10 are decomposed by ion implantation 11 and the polycrystalline core layer is converted into an amorphous layer 5'. The ion implantation 11 is always applied immediately in front of the heating source 6 and advanced synchronizing with the advancement of the heating source so that the part of the layer immediately in front of the heating source 6 is always amorphous. As a result, using a single-crystal silicon as a core, solid phase epitaxial growth of amorphous Si progresses along the horizontal direction. |
