| 摘要 |
PURPOSE:To form a temperature detecting circuit which can be incorporated in a semiconductor integrated circuit, and also is inexpensive and has high accuracy by incorporating a P-N junction diode consisting of polycrystal silicon in the circuit as a temperature sensor, in the semiconductor integrated circuit. CONSTITUTION:A resistance element 102 and 103 are connected in parallel to a power source in a state that they are connected in series. Also, a resistance element 104 and a polysilicon diode 106 are connected in parallel to the power source in a state that they are connected in series. A connecting point of the resistance element 102 and 103, and a connecting point of the resistance element 104 and the polysilicon diode 106 and denoted as 107 and 108, respectively, and 107 and 108 become an input of a comparator 105. A code 601 and 602 denote the potential variation of 107 and the potential variation of 108, respectively. Also, a code 603 shows a temperature at which magnitude of the potential of 107 and 108 is inverted, and at this temperature, an output of the comparator 105 is inverted. That is to say, the temperature 603 is detected. |
