| 摘要 |
PURPOSE:To improve the reproducibility of colors and an S/N ratio by coating a section between inter-layer insulating films with a poly-silicon film 11 and forming a light-shielding film. CONSTITUTION:MOS transistor groups consisting of n type sources 2 and drains 3 and gate electrodes 4 are constituted on a p type semiconductor substrate 1. The source 2 also constitutes a photodiode 5 together with the substrate 1, and each photoelectric conversion element composed of the diode 5 and an MOS transistor is insulated by a field oxide film 6 and inter-layer insulating films 7a, 7b, 8, and connected by an Al wiring 9. A polysilicon film 11 is applied and formed between the films 7a, 7b on the diode 5 corresponding to an Al film 10 for shielding light shaped on the film 8. |
