发明名称 POSITIVE TYPE PHOTORESIST COMPOSITION
摘要 PURPOSE:To improve the resolution (gamma value) of a positive type photoresist composition contg. a quinone diazide compound and m-cresol-formaldehyde novolak resin by using novolak resin showing a specified nuclear magnetic resonance spectrum as said novolak resin. CONSTITUTION:m-Cresol-formaldehyde novolak resin having >=0.15 N value represented by the equation is used. In the equation, a, b, c and d are areal values of peaks at about 112.5pp, about 115.5pp, about 116.7pp and about 119.6pp in the <13>C-NMR (nuclear magnetic resonance) spectrum of a soln. of the novolak resin in dimethylsulfoxide. A proper amount of epoxy resin having two or more epoxy groups per one molecule, a photosensitive agent, a dye, etc. are added to a positive type photoresist composition contg. said novolak resin and a quinone diazide compound in (1:1)-(6:1). The epoxy resin is added so as to improve the adhesive strength. A resist having a high gamma value, that is, high resolution can be obtd.
申请公布号 JPS59162542(A) 申请公布日期 1984.09.13
申请号 JP19830036318 申请日期 1983.03.04
申请人 SUMITOMO KAGAKU KOGYO KK 发明人 FURUTA AKIHIRO;HANABATAKE MAKOTO;YASUI MASAAKI;HIROAKE OSAMU;JINNO NAOMI
分类号 G03C1/72;C08G8/00;C08G8/12;G03F7/022;G03F7/023 主分类号 G03C1/72
代理机构 代理人
主权项
地址