| 摘要 |
PURPOSE:To prepare a synthetic quartz free from OH group and Cl, by burning a gaseous Si compound and a specific gaseous F compound, depositing the produced silica on a heat-resistant substrate, and heating and melting the deposit. CONSTITUTION:The Si compound of formula I (R<1> and R<2> are 1-4C alkyl; 0<=m<=4) and the gaseous F compound of formula II (1<=a<=3; 0<=b<=7; 1<=c<=8; 0<=d<=7; X is halogen) are accompanied with a carrier gas blasted into the vessel 1 and supplied to the central part n1 of the burner 5. At the same time, the burner 5 is supplied with O2 from n2 at the outer side of the central part n1, H2 gas from n3, and O2 gas from n4 to effect the combustion of the gases and to produce silica. The silica is depoisted on the heat-resistant substrate 8 bonded to the device for controlling the rotational and reciprocal motion through the connecting means 7 to obtain a porous sintered silica. The objective synthetic quartz can be prepared by heating and melting the sintered material 9 in a vacuum furnace. |
