发明名称 |
DIRECT PROCESS FOR THE PRODUCTION OF CHROME MASKS WITH A PATTERN GENERATOR |
摘要 |
Reticle patterns are formed upon a chrome-coated plate by means of forming a resist pattern upon the surface of the chrome having a predetermined thickness at which resonant absorption phenomenon occurs and a maximum rate of development is achieved. The resist layer should comply with the relationship <IMAGE> where lambda is representative of the chosen wavelength of the light source used to expose the resist, n is representative of the index of refraction of the resist for that chosen wavelength, and k is an integer ranging from 0 to 4. Resists with such thicknesses establish stationary wave phenomena in order to permit use of very thin resist layers. The value of k should preferably be one, for a resist thickness of about 1800 A where n equals 1.63 and lambda is about 4050 A for xenon lamps. The resist is then exposed by a pattern generator, developed, and a positive or negative pattern is formed by means of etching or a lift-off technique, respectively. |
申请公布号 |
EP0021095(B1) |
申请公布日期 |
1984.09.12 |
申请号 |
EP19800102985 |
申请日期 |
1980.05.29 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;COMPAGNIE IBM FRANCE |
发明人 |
DESCAMPS, DENIS;GUERMONT, DANIEL;PIACZINSKI, ZBIGNIEW;SAUTEREAU, JACQUES |
分类号 |
G03F1/68;G03F1/76;G03F7/16;G03F7/20;G03F7/42;H01L21/027 |
主分类号 |
G03F1/68 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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