| 摘要 |
PURPOSE:To enable to obtain the titled device of high efficiency by providing an incident light side electrode with an acicular uneven surface, and providing an Si carbide semiconductor in contact with this surface. CONSTITUTION:The first photo transmitting conductive film 2 whose main constituent is indium oxide, having the acicular uneven main surface, is formed on a photo transmitting substrate 1. Next, the second photo transmitting conductive film whose main constituent is tin oxide is formed on the film 2, thus being decided as the second electrode. Then, a non single crystal semiconductor 6 having at least one P-I-N junction having the P type conductive Si carbide semiconductor is provided on said electrode by lamination, and the second electrode is provided on this semiconductor 6. Thereby, the contact resistance with the Si carbide can be reduced by providing the photo transmitting conductive film with the acicular uneven surface. Besides, because of the low absorption loss of Si carbide, the photoelectric conversion efficiency can be largely improved. |
