| 摘要 |
PURPOSE:To obtain the titled electrode of a large height and high reliability by a method wherein the lower metallic layer is composed of a metallic material easier to be etched than in the upper one, when said electrode is provided by laminating a plurality of metallic layers on a substrate, in a chip carrier type semiconductor device. CONSTITUTION:Using a mask 2 of a metal or a film resist, the first metallic layers 3 of Al, etc. relatively easier to be etched are adhered on the package substrate 1 up to a desired height by a CVD method. Next, the second metallic layers 4 made of Cu are laminted thereon and decided as the junction electrode having a sufficient height. Thereafter, the surface of the layer 4 is etched into an approximately semi-circular shape, and the diameter of the layer 3 positioned thereunder is made slender to prevent the contact with the other electrode. Then, these electrodes are surrounded by a solder or an Au-Sn alloy 5, resulting in obtaining the junction electrode having a desired height. |
