| 摘要 |
PURPOSE:To prevent the deterioration of electric characteristics by forming the current restricting resistor for a surge voltage in the collector region of a transistor. CONSTITUTION:An N type high concentraton buried layer 2', an island region 3 formed of an epitaxial layer, a collector contact N<+> region 7, and a base region 5 are formed on a P type substrate 1. By this constitution, the impedance for the current flowing from the layer 2' toward the region 7 increases. Besides, the impedance of a current path toward the layer 7 from the substrate 1 without passing through the layer 2' increases. Therefore, the impedance leading from the substrate 1 toward the region 7 increases, and accordingly the strength of static breakdown of the transistor increases. |
