| 摘要 |
PURPOSE:To restrain the generation of cracks, etc. by a method wherein only an epitaxial layer is obtained by removing a semiconductor substrate, after performing epitaxial growth on said substrate, and thus previously forming an epitaxial layer protection film. CONSTITUTION:A p type Ga0.4Al0.6As layer 12, a p type Ga0.7Al0.3As layer 13, and an n type Ga0.4Al0.6As layer 14 are successively laminated and formed on the p type GaAs substrate 11. Subsequently, an AuGe/Ti/Al layer 15 is formed on the layer 14 as an ohmic electrode and epitaxial layer protection film. Next, the substrate 11 is removed. At this time, since a wafer is held by a layer 15, the shape as the wafer is held, and the generation of cracks reduces. Thereafter, AuZn/Au layers 16 are formed on the layer 12, and the wafer is divided into independent semiconductor pellets 17. |
