| 摘要 |
PURPOSE:To improve the adhesive property between a semiconductor element and JCR and also JCR and molding resin, to improve the shielding power against the infiltration and transmission of moisture and ionic impurities contained in the JCR itself and to contrive improvement in dampproof property of the semiconductor element by a method wherein the surface of the semiconductor element is modified by performing a gas plasma processing on the JCR surface after it has been hardened. CONSTITUTION:Leads 2 and 3 are connected to both ends of a semiconductor element 1, an etching process is performed on the surface of the semiconductor element 1, and the surface is cleaned and dried up. Between each chip 4, and the chip 4 and leads 2, 3 are fixed using solder 5. Then, varnish type unhardened JCR is applied on the surface of the element 1. Polyimide denatured silicon resin is used, for example, as JCR. Subsequently, the JCR is heat-cured in a nitrogen gas atmosphere, and then a plasma processing is performed. By the plasma processing, an etching, a crosslinking reaction, a chemical modification and a reaction such as polymerization and the like are generated compositely, thereby enabling to perform a surface modification. Subsequently, epoxy resin 7 is formed by performing a transfer molding method. |
