| 摘要 |
<p>This invention provides a surface acoustic wave device which comprises a multi-layered substrate. The multi-layered substrate comprises at least a piezoelectric zinc oxide layer, an intermediate silicon oxide layer and an alpha -Al2O3 base made of a single crystal havine an (0112) crystallographic plane or an equivalent crystallographic plane. This surface acoustic wave device is operable at ultra-high frequency.</p> |
