| 摘要 |
PURPOSE:To provide a titled target which contains Si in a high content, is free from internal defects, has a high density and does not generate cracking, etc. by cooling and solidifying extremely slowly an alloy consisting of specifically composed Ni, Cr and Si from a molten state. CONSTITUTION:A target of high silicon nichrome for sputtering is a target which contains 70-10% Ni, 70-10% Cr, and 15-30% Si, has high initial resistance and a small coefft. of resistance temp. and is suitable for the manufacture of a thin resistance film to be used as an electronic part. Said target is obtd. by melting and casting the alloy having the abovementioned compsn. and cooling slowly the alloy at a rate of about <=1 deg.C/min in the temp. range from the temp. at which the solidification begins down to an ordinary temp. The atmosphere for melting is made preferably a vacuum or inert gaseous atmosphere to prevent oxidation of the metal. If Si is <=15% in the compsn. of the above-mentioned alloy, the target having high resistance is not obtainable, and at >=30%, the target having a high density without internal defects is difficult to obtain. If Ni and Cr are out of the above-mentioned range, the generation of casting defects is unavoidable. |
