首页
产品
黄页
商标
征信
会员服务
注册
登录
全部
|
企业名
|
法人/股东/高管
|
品牌/产品
|
地址
|
经营范围
发明名称
VORRICHTUNG ZUM SCHUTZ VON SCHLOESSERN IN SICHERHEITSSCHRAENKEN
摘要
申请公布号
DE8417668(U1)
申请公布日期
1984.09.06
申请号
DE19840017668U
申请日期
1984.06.09
申请人
SORGER, ALFRED, 7101 LANGENBRETTACH, DE
发明人
分类号
E05B9/00;E05B65/52;(IPC1-7):E05B65/52
主分类号
E05B9/00
代理机构
代理人
主权项
地址
您可能感兴趣的专利
CORROSION-RESISTANT CATALYST
NEGATIVE ACTIVE MATERIAL FOR RECHARGEABLE LITHIUM BATTERY, AND RECHARGEABLE LITHIUM BATTERY INCLUDING SAME
SECONDARY BATTERY
BATTERY CELL ASSEMBLY
ELECTROCHEMICAL CELL CASING HAVING AN OPEN-ENDED MAIN BODY PORTION OF GRADE 5 OR 23 TITANIUM CLOSED BY UPPER AND LOWER LIDS OF GRADE 1 OR 2 TITANIUM
METHOD OF MANUFACTURING CURVED DISPLAY DEVICE
THIN-FILM DEVICE AND MANUFACTURING METHOD THEREOF
MAGNETIC TUNNEL JUNCTION DEVICE
LED Metal Substrate Package and Method of Manufacturing Same
METHOD OF MANUFACTURING LIGHT EMITTING DEVICE
Light Extraction from Optoelectronic Device
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
A METAL-OXIDE FIELD EFFECT TRANSISTOR HAVING AN OXIDE REGION WITHIN A LIGHTLY DOPED DRAIN REGION
VERTICAL TRANSISTOR AND THE FABRICATION METHOD
SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING THE SAME
METHOD FOR FORMATION OF VERTICAL CYLINDRICAL GaN QUANTUM WELL TRANSISTOR
Planar Triple-implanted JFET
Structure And Method For FinFET Device With Buried Sige Oxide
Method of Reducing the Heights of Source-Drain Sidewall Spacers of FinFETs Through Etching
BUFFER LAYER FOR MODULATING Vt ACROSS DEVICES