| 摘要 |
PURPOSE:To inspect the size and number of a film defect by providing a focusing means, a defelection means, a deceleration means decelerating an insulating film up to a value which does not transmit the insulating film equivalently, an information signal display means corresponding to the defect, etc. when the insulating film of a minute pattern formed on a metal or a semiconductor substrate is inspected by using electron beams. CONSTITUTION:An electric field-radiation cathode 11 is mounted into an electrooptic system mirror body 16 with an evacuating means 17, and electron beams from the cathode 11 are passed in a beam focusing means 13 through a diaphragm hole 12a formed to an anode 12, and irradiated onto an insulating film 2 of minute patterns on a sample 32 placed on a sample base 43. An auxiliary electrode 9 consisting of a metallic mesh is fitted on the sample 32 at that time, and fixed voltage is applied to the auxiliary electrode to decelerate the speed of beams up to a predetermined value. A pointed needle 11a consisting of a single crystal W wire and a filament 11b are fitted to the cathode 11, field radiation at low voltage is enabled, and secondary electrons are detected by a detector 22 and a defect is displayed to a pattern generator 31. |
