| 摘要 |
PURPOSE:To facilitate a removal through a development of the sensitized section of the whole surface, and to obtain a desired pattern by applying a first radiation sensitive resin film on the whole surface, selectively sensitizing the whole surface, applying a second resin film on the whole surface and previously thinning the thickness of laminated resin films of the sensitized section when the pattern consisting of the resin films is formed on a substrate. CONSTITUTION:A positive type photosensitive resin film 12 is applied onto the whole surface of a substrate 11, which consists of a semiconductor or the surface thereof has an insulating film, and beams (l) having a photosensitizing wavelength such as ultraviolet rays are irradiated selectively to form a photosensitive resion 12a. A second positive type photosensitive resin 13 is superposed and applied on the whole surface containing the regin 12a. Consequently, a film 14 consisting of the film 13 applied onto a region not irradiated of the film 12 is not mixed with the film 12, and the film 12 is mixed with the film 13 in a section 15 on an irradiating region 12a and film thickness is thinned, thus accelerating a developing rate in the section 15. The films 12 and 13 are developed and treated and the regions 12a and the sections 15 are removed to form opening sections 16, a desired resin pattern is obtained, and the substrates 11 exposed into the opening sections 16 are etched and treated. |
