| 摘要 |
PURPOSE:To obtain a wiring layer of a flat surface by a method wherein a first insulating film, an etching rate thereof is slow, and a second insulating film, an etching rate thereof is fast, are laminated on the contact extracting surface of a semiconductor substrate, contact holes are bored to the insulating films, the whole surface is coated with a wiring layer while burying the contact holes, the inferior sections of step coverages in the holes are removed, and the wiring layer is renewed and connected to said wiring layers remaining in the holes. CONSTITUTION:A first insulating film 2, an etching rate thereof is slow, and a second insulating film 6, an etching rate thereof is fast, are laminated and formed on a semiconductor substrate 1, contact holes 3 are bored, and the whole surface is coated with a wiring layer 4 while burying the contact holes. However, the film 6 is etched to expose the side walls 7 of the holes 3 while the film 6 is removed largely in the lateral direction because the inferior sections of step coverages are generated in the upper sections of the holes 3. The film 2 is removed together with the layer 4 of the upper section of the film 2, and the whole surface is coated with a similar wiring layer 4 while being brought into contact with said layers 4 buried in the film 2 in the holes 3 again. |
