| 摘要 |
PURPOSE:To thicken the film thickness of a resist film applied, and to reduce the irregularities of a stepped difference section on a substrate by selectively photosensitizing a radiation sensitive resin film in multilayer structure having different developing rates, developing the resin film first by using a developer of high concentration and developing it by a developer of low concentration. CONSTITUTION:A thick positive type ultraviolet resist film 7 is applied onto a semiconductor substrate 1 on which an insulating film 2, the surface thereof has stepped difference section patterns 2a, is formed while burying patterns 2a. Ultraviolet beams 10 are irradiated to the whole surface to change the film 7 into a photosensitized film 7a, the film 7a is turned into a film 7b through heat treatment, a second resist film 8 of the same type as the film 7 is applied onto the film 7b, and the whole surface is exposed and thermally treated. A mask 9 with light shielding sections 9a consisting of Cr is superposed on films in isolated multilayer applying structure difficult to be mutually dissolved as mentioned above, ultraviolet rays are irradiated, one parts of the film 8a of an irradiating section and the film 7b under the film 8a are removed by using a developer in high concentration, and patterns consisting of the films 8 and 7b are left by employing a developer in low concentration. |
