| 摘要 |
<p>PURPOSE:To increase the degree of integration while equalizing the surface of a semiconductor substrate by burying a wiring into an element isolation region consisting of an insulator formed to the surface of the substrate when the wiring is formed to an MOS type IC. CONSTITUTION:A thick element isolation region 2 consisting of SiO2 is formed to the surface layer section of an Si substrate 1 through selective oxidation, and one part of the region 2 is processed through etching and a groove 4 for a wiring of a predetermined pattern is bored. The wiring 3 composed of polycrystalline Si, Mo silicide, Al, etc. is buried into the groove 4 while the surface is coated with an SiO2 film 3a. Accordingly, since the wiring 3 is not projected onto the region 2, the degree of integration is improved, and the pattern is fined.</p> |
