| 摘要 |
PURPOSE:To obtain a film of a minute pattern by applying a photosensitive film first on a semiconductor substrate, exposing and developing a predetermined section, removing the surface only by fixed depth, burying the removed section with an organic silicon compound, curing the section through heat treatment, and removing the photosensitive film of an unnecessary section through etching while using the cured section as a mask when the pattern consisting of the photosensitive film is formed on the substrate. CONSTITUTION:A resist film 12 is applied on a semiconductor substrate 11 as a material to be etched in 1-2mum, predetermined minute patterns are projected and exposed by using a mask pattern and developed, and recessed sections 13 in approximately 3,000Angstrom are formed to the developed sections. An organic silicon compound 14 is buried into the recessed sections 13, and cured through heat treatment at a low temperature. The film 12 of an exposed section is removed through anisotropic etching by plasma while using the cured compounds 14 as masks, minute patterns consisting of the compounds 14 and the film 12 under the compounds are obtaned, and the substrate 11 is etched through a prescribed method while employing the patterns as masks. |
