| 摘要 |
PURPOSE:To obtain a minute pattern regardless of the kinds and presence of a stepped difference of a semiconductor substrate by coating the upper section of the substrate with a first resin layer, cooling the surface by using a solution, which does not dissolve the resin and the boiling point thereof is lower than a solvent for the resin, and laminating a second resin layer and patterning these laminated resins. CONSTITUTION:SiO2 17 and 18 of different thickness on a semiconductor substrate 11 are connected and formed, and a positive type photosensitive resin layer 12 thicker than a stepped difference between the SiO2 is applied onto the SiO2. Photosensitizing wavelength beams are irradiated to the whole surface to make the layer 12 alkali-soluble, and the surface of the layer 12 is cooled at 15 deg.C or less by using 1, 1, 2, trichlorotrifluoroethane, etc., which do not dissolve the resin in the layer 12 and do not dissolve cellosolve acetate as a solvent for the resin. Accordingly, a degenerated layer 13, solubility thereof reduces, is generated previously on the surface of the layer 12, a thin photosensitive resin film 14 not photosensitized is applied on the layer 13, and beams are irradiated to one parts 14a of the film 14 to make them alkali-soluble. openings 15 are bored to the laminated resins through etching. |
