| 摘要 |
An integrated circuit for a controllable frequency oscillator using integrated variable-capacitance capacitors. The circuit is a MOS type. Each of the variable capacitance capacitors comprises a n+-p junction at the interface of a first region of n+ conductivity type and a second region of p conductivity type, which are formed in a semiconductor substrate of n type. The first and second regions emerge at the surface of the semiconductor wafer. A decoupling capacitor is associated with the variable-capacitance capacitor by the formation of a stack arrangement comprising the portion of insulating oxide layer covering the surface portion of the wafer at which said first region emerges and an electrically conducting layer covering said insulating layer portion.
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