发明名称 |
Semiconductor laser having an etched mirror and a narrow stripe width, with an integrated photodetector |
摘要 |
In an integrated optical semiconductor device wherein a stripe geometry laser diode is separated from a photodetector by an etched groove, the stripe region has a smaller width, such as 2 to 3 microns, than a carrier generating region of the photodetector. The stripe region is preferably rendered thicker than the carrier generating region, in which case the carrier generating region is more preferably made of a seimconductor material having a narrower band gap than the material of the stripe region. The stripe region may be defined by a buried mesa structure. Alternatively, the stripe region may be bounded transversely of a pair of heterojunctions therefor by a pair of channel-shaped regions of a semiconductor material having a wider bank gap than the material of the stripe region. In this event, the carrier generating region is divided into three parts by extensions of the channel-shaped regions. Most preferably, the carrier generating region has a light receiving end which is not parallel to a light emitting end of the stripe region. The light receiving end may be cylindrical.
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申请公布号 |
US4470143(A) |
申请公布日期 |
1984.09.04 |
申请号 |
US19820408302 |
申请日期 |
1982.08.16 |
申请人 |
NIPPON ELECTRIC CO., LTD. |
发明人 |
KITAMURA, MITSUHIRO;KOBAYASHI, KOHROH;SUGIMOTO, SHIGETOKI |
分类号 |
H01L33/00;H01S5/026;H01S5/10;H01S5/20;H01S5/227;(IPC1-7):H01S3/19 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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