Gallium arsenide static induction transistor

摘要

A gallium arsenide static induction transistor of normally-off type simple in manufacture and exhibiting a superior function and suitable for use in low and medium power operation in integrated circuit is obtained by arranging so that its channel region has a length l ( mu m), a width ( mu m) and an impurity concentration N (cm-3), and that the ratio l/w is 0.5-5.0 and that the product Nw2 is not larger than 2.5x1015 cm-3. mu m2.