| 发明名称 |
Method for making thin-film transistors |
| 摘要 |
A method for making a thin-film transistor wherein a gate insulating layer is formed by anodizing two oxide layers on the substrate and then etching the assembly to completely remove the uppermost one of these layers to leave the lowermost layer so as to serve as the gate insulating layer.
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| 申请公布号 |
US4469568(A) |
申请公布日期 |
1984.09.04 |
| 申请号 |
US19820446046 |
申请日期 |
1982.12.01 |
| 申请人 |
SHARP KABUSHIKI KAISHA;JAPAN ELECTRONIC INDUSTRY DEVELOPMENT ASSOCIATION |
发明人 |
KATO, HIROAKI;KISHI, KOHHEI;TAKAFUJI, YUTAKA |
| 分类号 |
H01L29/78;H01L21/28;H01L21/316;H01L21/336;H01L29/49;H01L29/786;(IPC1-7):C25D5/44;H01L49/02 |
主分类号 |
H01L29/78 |
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