| 摘要 |
PURPOSE:To obtain a quantum well type surface light emitting semiconductor laser capable of oscillating in a surface light emitting type adapted for a mass production with a quantum sizing effect and without necessity of a process of a cleavage by forming the thickness of a layer having a narrow forbidden band width in the degree of presenting the quantum sizing effect, and alternately laminating repeatedly the conductive types of a layer having a wide forbidden bandwidth in different types at the layer having a narrow forbidden band width. CONSTITUTION:A laser oscillating light 18 is emitted vertically to the substrate surface 17 in a surface light emitting laser, and electrons and holes are respectively injected from an N type semiconductor unit 15 having n type and wide forbidden band width, and a P type semiconductor unit 14 having P type and wide forbidden band width. The electrons injected from the unit 15 are flowed to an N type layer 13 having a wide forbidden band width, and further flowed to an active layer 11 having further narrow forbidden band width. The holes flowed from the unit 14 are flowed to the layer 12 having the wide forbidden band width, further flowed to the layer 11, recombined with the injected electrons, thereby emitting a light. In this case, the thickness of the layer 11 is formed thinly to present the quantum sizing effect. A quantum well type surface light emitting semiconductor laser capable of oscillating in the surface light emitting type adapted for a mass production without necessity of a process of a cleavage can be obtained in this manner. |
