| 摘要 |
PURPOSE:To improve the characteristics by forming metal oxidized on the surface on a substrate covered with a conductive layer, thereby increasing the absorption of long wavelength light having small absorption coefficient. CONSTITUTION:An oxide layer 2 of alloy is formed in approx. 1mum by oxidizing on the surface of a metal substrate 1 using Fe-14%Cr-0.1%Ti alloy. Amorphous silicon layers 4 of P type, I type and N type are sequentially laminated on the conductive layer 3 formed on the layer 2, respectively having 100, 5,000, and 500Angstrom . A transparent electrode 5 is formed in a thickness of 700Angstrom by adding tin to oxidized indium film. The layer 2 is formed on the surface of the substrate 1 so that an uneven surface of approx. wavelength of visible light is formed on the surface of the substrate. The layer 3 is to produce a current generated in an amorphous silicon layer, uses aluminum of 0.5mum thick. In addition, metal such as titanium can be used, and conductive compound such as oxidized indium can be used. |
