| 摘要 |
PURPOSE:To enable to retain the stoichiometry of a substrate surface in the process of annealing by forming a PAsSG film as the base film on the surface of an As compound semiconductor substrate, forming an SiN, AlN, TiN, ZrN, or SiC film thereon, and then performing heat treatment. CONSTITUTION:After forming an SiO2 film 2 on the GaAs substrate 1, a resist 3 is applied and developed, said film 2 is opened by etching, and then the surface of said substrate 1 is exposed there for ion implantation. After forming an ion implanted layer 4 by implanting Si ions, the resist 3 on the substrate 1 and the film 2 are exfoliated over the entire surface. Next, the PAsSG film 5 is formed and thereafter an Si nitride film 6 is formed by lamination. The capped substrate 1 is heat-treated with an open tube, thus activating the ion implanted layer 4. After the heat treatment, the Si nitride film 6 and the PAsSG film 5 are selectively opened, electrodes 7 composed of Al, etc. are formed in the apertures, and the remnant Si nitride film and PAsSG film are left as passivation films. |
