| 摘要 |
PURPOSE:To enable to obtain desired stable current amplification factor without occcurrence of abnormal leakage current between a collector and an emitter by forming a base region and a P-N junction so that the first emitter region exists in the peripheral region of the emitter region. CONSTITUTION:An N type silicon substrate 11 is used as a collector, and a P type base region 12 is formed in the substrate. An N type emitter region 14 formed in the base region has a low impurity density emitter first region 14a and a high impurity density emitter second region 14b, and the first region 14 exists in the peripheral region of the emitter region to form a base region 12 and a P-N junction 15. A silicon oxidized film 13 is formed on the surface, a window for forming an emitter is opened, arsenic ions are implanted by low energy to form the low density emitter first region 14a. Then, it is heat treated in inert gas atmosphere, thereby adjusting the depth of the region 14a. Then, phosphorus is thermally diffused, and heat treated in inert gas atmosphere. |
