| 摘要 |
PURPOSE:To eliminate the variation in the sheet resistance, in the depth of a junction, in the insulating withstand strength and the increase in the diameter of contacting holes by forming a glass film which contains an impurity on a semiconductor substrate, then selectively opening the glass film to form contacting holes and further directly heating it. CONSTITUTION:Arsenic ions are, for example, implanted to a substrate 11, and a heat treatment is executed to form n<+> type source and drain regions 16, 17. After a PSG film 18 is further formed on the entire surface, the film 18 corresponding to parts of the regions 16, 17 is selectively removed by an RIE method to form contacting holes 19, 19. Then, tapered parts 20 are formed at the holes 19, 19 of the film 18 by directly heating at 100 deg.C (approx. 900 deg.C of the substrate temperature) for 30sec in an atmosphere by using, for example, a tungsten halogen lamp. Subsequently, after aluminum is deposited on the entire surface, it is patterned to form aluminum wirings 21, 21 connected to the regions 16, 17 in the holes 19, 19. |
