| 摘要 |
<p>Information storage medium (10) comprising a semiconductor (16) doped with first and second impurities or dopants. Preferably, one of the impurities is introduced by ion implantation. Conductive electrodes (14) are photolithographically formed on the surface of the medium. Information is recorded on the medium by selectively applying a focused laser beam (24) to discrete regions of the medium surface so as to anneal discrete regions of the medium containing lattice defects introduced by the ion-implanted impurity. Information is retrieved from the storage medium by applying a focused laser beam to annealed and non-annealed regions so as to produce a photovoltaic signal at each region. </p> |
