| 摘要 |
A packaged integrated circuit device has an insulating substrate (4) of silicon carbide base, a cap (5) made of a material having a linear thermal expansion coefficient of 20 to 55x10<-7>/ DEG C and a sealing glass 6 having a linear thermal expansion coefficient of 30 to 55 x 10<-7>/ DEG C for sealing the cap with the substrate to define a small hermetic chamber. A semiconductor device (1) is mounted on the substrate (4), lead members (3) are introduced from the outside of the chamber, and wires (2) connect end portions (3a) of the lead members (3) to the semiconductor device (1). The semiconductor device, the end portions (3a) of the lead members (3) and the wires (2) are enclosed in the chamber. Suitable cap materials having a linear coefficient of expansion of 20 to 55 x 10-7/ DEG C are ceramics consisting mainly of silicon carbide, or mullite, or zircon, or silicon nitride. <IMAGE> |
