Growth of semiconductors.

摘要

A gas mixture containing phosphine and R<Sub>1</Sub>R<Sub>2</Sub>R<Sub>3</Sub> In X R<Sub>4</Sub>R<Sub>5</Sub>R<Sub>6</Sub> or R<Sub>I</Sub>R<Sub>2</Sub> In X R<Sub>4</Sub>R<Sub>5</Sub> where the Rs are alkyl groups is passed over a semiconductor substrate (1) comprising indium and phosphorus so as to deposit a semiconductor material comprising indium and phosphorus, and the exposure of the substrate (1) to phosphine is controlled to avoid or reduce transport of the substrate material.

Thus, for example, indium phosphide (5) may be grown onto corrugations in gallium indium arsenide phosphide (4). the corrugations being undeformed during this growth. a growth step may be used in the production of distri feedback semiconductor lasers operating near 1.55