| 摘要 |
PURPOSE:To obtain a shallow emitter region of approximately 500Angstrom or below in depth by a method wherein an aperture part is provided in such a manner that an insulating film is covered on the base region formed by diffusion on a semiconductor substrate, a thin polycrystalline Si film and a Pt film are laminated and coated on the whole surface in such a manner that they are spreading on the outside of the aperture part, and an emitter region positioned between a Pt silicide layer and the substrate is generated by ion-implanting impurities thereon. CONSTITUTION:A P type base layer 21 of 0.1mum or thereabout is formed by diffusion on an N type Si substrate 20, an aperture part covering an SiO2 film 22 is provided, a polycrystaline Si film 23 of approximately 500Angstrom in thickness and a Pt film 24 of 500Angstrom or thereabout are laminated and coated on the whole surface including said aperture part in such a manner that they are spreading on the outside of the aperture part. Subsequently, an As ion is implanted on the whole surface, the film 24 is converted into a Pt silicide layer 26 by performing a heat treatment and, at the same time, a shallow N type emitter region 25 is generated in the layer 21 by stretchingly diffusing an As ion. Then, an Al electrode 28 is installed on the layer 26 through the intermedially of the alloy film 27 of Ti and W to be used for prevention of solid-phase reaction. |
