| 摘要 |
PURPOSE:To select the circuit constitution suitable for a magnetic bubble memory all the way from a small capacity to a large capacity and to attain wide range of application by providing a selecting system setting terminal of a magnetic bubble memory device to a magnetic bubble memory device control circuit. CONSTITUTION:The figure shows a block diagram of main part when a magnetic bubble memory device control circuit (BMC)32 is used and connection is attained so as to select a maximum of 2nsets of MBMs 21. A voltage of +5V is applied as, e.g., high level signal to the selecting system setting signal input terminal 38a provided to the memory device control circuit BMC32, and a decoder circuit 40 is connected to n-sets of magnetic bubble memory device selecting signal output terminals 32a so as to output n-sets of binary signals, thereby constituting a large capacity of the magnetic bubble memory device by selecting one MBM21 among the 2n-sets of the MBMs 21. |
