| 摘要 |
PURPOSE:To eliminate the need for a positioning margin, and to miniaturize a semiconductor device by boring all of positions to be diffused first. CONSTITUTION:A nitride film 2 and an oxide film 3 are formed on the whole surface of an N type semiconductor substrate 1, and the film 3 is bored selectively to form openings 6, 7. The film 2 under the openings 6 is removed by using a photo-resist 8 to form openings 9. Films 4 and 5 are each removed while leaving films 11, 12 on emitter and base contact forming regions by using a photo-resist 10. A base region 14 is formed by using a photo-resist 13. There is no necessity for allowing for the displacement of positioning on the formation of a pattern in said processes. An oxide film 15 is formed through selective thermal oxidation utilizing the films 11, 12. Openings 16-18 are formed by removing the films 11, 12 and the nitride film under the opening 7. Polycrystalline Si is formed on the whole surface, and oxide films 19 are formed by oxidizing polycrystalline Si except polycrystalline Si 20-22. |
