| 摘要 |
PURPOSE:To augment especially integration of bipolar type IC by a method wherein, when an oxide film for insulating separation is formed on a semiconductor device, a groove is made into a substrate to deposit an oxide film on overall surface by chemical vapor growth while burying the groove and another oxide film deposited on any part other than the groove is removed by means of anisotropic etching process. CONSTITUTION:A groove 3 is made into specified region of an N type epitaxial layer 1 grown on a P type Si substrate by means of reactive ion etching process using a mask. Next an oxide film 2 is formed on overall surface of the layer 1 by chemical vapor growth while burying the groove and a constriction 4 produced in the central part of the groove 3 is buried by the oxide film 2 as necessary. Later the film 2 deposited on the layer 1 is removed by anisotropic etching process such as reactive ion etching etc. leaving the oxide film 2 only in the groove 3. Through these procedures, the space margin between an insulating separation region and internal element may become needless making interface flat and eliminating any step disconnection of Al wiring and the like. |
