| 摘要 |
PURPOSE:To obtain a highly accurate etching surface by a method wherein a plasma etching device and a sample processing chamber are vertically provided side by side on the vacuum device which constitutes an etching device, an ion lead-out electrode surrounded by an ion suppressing mesh electrode is provided on the boundary face of said plasma device and the sample processing chamber, and an inner ion lead-out nozzle coaxial to the lower part of the ion lead-out electrode and an outer radical stream flux nozzle are provided. CONSTITUTION:The plasma chamber 11 with a gas feeding tube 15 and the sample processing chamber 12 with an exhaust tube 19 are vertically provided side by side in a vacuum device, and an ion lead-out electrode 14 and a mesh-formed ion suppressing electrode 15 which is positioned on the outer circumference of said electrode 14 are provided in the center part of the boundary of the above-mentioned plasma chamber 11 and the sample processing chamber 12. Then, an ion lead-out nozzle 16 having an electrostatic lens and a deflecting electrode inside it hangs down from the electrode 14, and a radical stream flux nozzle 17 hangs down from the electrode 15 surrounding the ion lead-out nozzle 16. By constituting the titled device as above, the electrodes 14 and 15 are controlled independently, and an ion beam 21 and a radical stream flux 20 are made to irradiate on a substrate 18. |
