| 摘要 |
<p>PHN 9781 .14. 27.2.1981 "Semiconductor laser" pn-laser with double hetero junction comprising a strip-shaped semiconductor contact layer (4) which is present on a passive layer (2) of the same conductivity type, with a highly doped zone (14) of said same conductivity type which extends over at least a part of the thickness of the contact layer (4) and beside the contact layer in the passive layer (2) so as to increase the radiation mode stability. According to the invention the highly doped zone (14) extends only over a part of the thickness of the said passive layer (2) in such manner that below and beside the contact layer (4) a difference arises in effective refractive index of at least 0.0005 and at most 0.005.</p> |
